IL221A Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

FEATURES
NEW
• High Current Transfer Ratio, I_F=1 mA,
IL221A, 100% Minimum
IL222A, 200% Minimum
IL223A, 500% Minimum
• Withstand Test Voltage, 2500 VAC_RMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
IL221A/IL222A/IL223A
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
.016 (.41)
NC 4
.192±.005
(4.88±.13)
.015±.002
40°
(.38±.05)
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.040 (1.02)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
The IL221A/IL222A/IL223A is a high current trans-
fer ratio (CTR) optocoupler with a Gallium Arsenide
infrared LED emitter and a silicon NPN photodar-
lington transistor detector.
This device has a CTR tested at an 1 mA LED cur-
rent. This low drive current permits easy interfacing
from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C......................2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ....................................240 mW
Derate Linearly from 25°C......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Characteristics (T_A=25°C)
Symbol
Emitter
Forward Voltage
V_F
Reverse Current
I_R
Capacitance
C_O
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Voltage,
Collector-Base
B_VCEO
B_VECO
BV_CBO
Capacitance,
C_CE
Collector-Emitter
Package
DC Current Transfer
Ratio
IL221A
IL222A
IL223A
CTR_DC
Saturation Voltage, V_CEsat
Collector-Emitter
Isolation Test
V_IO
Voltage
Capacitance,
Input toOutput
C_IO
Min. Typ. Max. Unit
Condition
1.0 1.5 V
0.1 100 µA
25
pF
I_F=1 mA
V_R=6.0 V
V_R=0 V,
F=1 MHz
30
5
70
3.4
V
I_C=100 µA
V
I_E=100 µA
I_C=10 µA
pF
V_CE=10 V
100
200
300
2500
I_F=1 mA,
V_CE=5 V
1
V
I_CE=0.5 mA,
I_F=1 mA
VAC_RMS t=1 sec.
0.5
pF
Resistance,
Input to Output
R_IO
100
GΩ
5–1
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