IL215AT Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, I_F=1 mA
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
• Isolation Voltage, 2500 VAC_RMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 7 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ............................ 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 280 mW
Derate Linearly from 25°C ............................ 3.3 mW/°C
Storage Temperature .......................... –55°C to +150°C
Operating Temperature ...................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
40°
(.38±.05)
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (T_A=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
V_F
1.0
Reverse Current
I_R
0.1
Capacitance
C_O
25
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
BV_CEO 30
BV_ECO 7
Dark Current
I_CEOdark
5
Collector-Emitter
Capacitance
C_CE
10
Package
DC Current Transfer CTR_DC
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
20 50
50 80
100 130
V_{CE sat}
V_IO
2500
C_IO
0.5
R_IO
100
t_ON, t_OFF
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
Condition
I_F=1 mA
V_R=6.0 V
V_R=0
V
V
50 nA
pF
%
I_C=10 µA
I_E=10 µA
V_CE=10 V,
I_F =0
V_CE=0
I_F=1 mA
V_CE=5 V
I_C=0.1 mA,
0.4
I_F=1 mA
VAC_RMS
pF
GΩ
µs
I_C=2 mA,
R_E=100 Ω,
V_CE=10 V
Semiconductor Group
4–7
10.95