IL211AT Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL211AT/IL212AT/IL213AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
IL211AT—20% Minimum
IL212AT—50% Minimum
IL213AT—100% Minimum
• Isolation Voltage, 2500 VAC_RMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I_F=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
40°
(.38±.05)
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (T_A=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
V_F
1.3
Reverse Current
I_R
0.1
Capacitance
C_O
25
Detector
Breakdown Voltage BV_CEO
30
BV_ECO
7
Collector-Emitter
Dark Current
I_CEOdark
5
Collector-Emitter
Capacitance
C_CE
10
Package
DC Current Transfer CTR_DC
IL211AT
20 50
IL212AT
50 80
IL213AT
100 130
Collector-Emitter
Saturation Voltage V_{CE sat}
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
V_IO 2500
C_IO
0.5
R_IO
100
t_ON, t_OFF
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
V
V
50 nA
pF
%
Condition
I_F=10 mA
V_R=6.0 V
V_R=0
I_C=10 µA
I_E=10 µA
V_CE=10 V,
I_F=0
V_CE=0
I_F=10 mA
V_CE=5 V
0.4
I_F=10 mA,
I_C=2.0 mA
VAC_RMS
pF
GΩ
µs
I_C=2 mA,
R_E=100 Ω,
V_CE=10 V
Semiconductor Group
4–4
10.95