IL205AT Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

FEATURES
• High Current Transfer Ratio, I_F=10mA,
V_CE=5 V
IL205AT, 40 – 80%
IL206AT, 63 –125%
IL207AT, 100 – 200%
IL208AT, 160 – 320%
• High BV_CEO, 70 V
• Isolation Voltage, 2500 VAC_RMS
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL205/6/7/8
come in a standard SOIC-8 small outline package
for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV_CEO of 70 volts gives
a higher safety margin compared to the industry
standard 30 volts.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 70 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 240 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Semiconductor Group
IL205AT/206AT/207AT/
208AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
40°
(.38±.05)
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (T_A=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
V_F
1.3
Reverse Current
I_R
0.1
Capacitance
C_O
25
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
BV_CEO 70
BV_ECO 7
10
Dark Current
I_CEOdark
5
Collector-Emitter
Capacitance
C_CE
10
Package
DC Current Transfer CTR_DC
IL205AT
IL206AT
IL207AT
IL208AT
DC Current Transfer
40
63
100
160
CTR_DC
IL205AT
IL206AT
IL207AT
IL208AT
Collector-Emitter
Saturation Voltage
Isolation Test Voltage
Equivalent DC
Isolation Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
13 25
22 40
34 60
56 95
V_{CE sat}
V_IO
2500
3535
C_IO
0.5
R_IO
100
t_ON, t_OFF
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
Condition
I_F=10 mA
V_R=6.0 V
V_R=0
V
V
50 nA
pF
%
80
125
200
320
%
I_C=100 µA
I_E=100 µA
V_CE=10 V,
I_F=0
V_CE=0
I_F=10 mA,
V_CE=5 V
I_F=1 mA,
V_CE=5 V
I_C=2.0 mA,
0.4
I_F=10 mA
VAC_RMS
VDC
pF
GΩ
µs
I_C=2 mA,
R_E=100 Ω,
V_CE=10 V
4–1
10.95