HYM72V8000GS-50- Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – 8M x 72-Bit Dynamic RAM Module

8M × 72-Bit Dynamic RAM Module
(ECC - Module)
HYM 72V8000GS-50/-60
HYM 72V8010GS-50/-60
Preliminary Information
• 8 388 608 words by 72-bit ECC - mode, one bank organization
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3V ± 0.3 V supply
• Low power dissipation
max. 4536 mW active (-50 version)
max. 3888 mW active (-60 version)
CMOS – 108 mW standby
TTL – 180 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 9 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes nine 8M × 8 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A
• Two versions: HYM 72V8010GS with SOJ-components ( 9 mm module thickness)
HYM 72V8000GS with TSOPII-components ( 4 mm module thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
115.95