HYM368025S Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 8M x 36-Bit EDO - DRAM Module

8M x 36-Bit EDO - DRAM Module
HYM 368025S/GS-50/-60
• SIMM modules with 8 388 608 words by 36-bit organization in two banks
for PC main memory applications
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
• Hyper Page Mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6820 mW active (-50 version)
max. 6160 mW active (-60 version)
CMOS – 132 mW standby
TTL –264 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height
• Utilizes sixteen 4Mx4-EDO-DRAMs and eight 4M x 1 EDO-DRAMs
in 300 mil wide SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (S- version)
• Gold contact pads (GS - version)
Semiconductor Group
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