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HYM328000GD- Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE | |||
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8M Ã 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 328000GD-50/-60
Preliminary Information
⢠8 388 608 words by 32-bit organization
⢠Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
⢠Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
⢠Single + 3.3 V (± 0.3 V) supply
⢠Low power dissipation
max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)
LVCMOS â 3.6 mW standby
LVTTL â 28.8 mW standby
⢠CAS-before-RAS refresh, RAS-only-refresh, Self Refresh
⢠4 decoupling capacitors mounted on substrate
⢠All inputs, outputs and clock fully TTL compatible
⢠72 pin, dual read-out, one bank, Small Outline DIMM Module
⢠Utilizes four 8M à 8 -DRAMs (HYB 3165800T)
⢠4096 refresh cycles / 64 ms
⢠Gold contact pad
Semiconductor Group
187
11.94
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