|
HYB514400BJ-50- Datasheet, PDF (1/24 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM | |||
|
1M Ã 4-Bit Dynamic RAM
HYB 514400BJ-50/-60
Advanced Information
⢠1 048 576 words by 4-bit organization
⢠0 to 70 °C operating temperature
⢠Fast Page Mode Operation
⢠Performance:
-50 -60
tRAC
RAS access time
50 60 ns
tCAC
CAS access time
13 15 ns
tAA
Access time from address
25 30 ns
tRC
Read/Write cycle time
95 110 ns
tPC
Fast page mode cycle time 35 40 ns
⢠Single + 5 V (± 10 %) supply with a built-in VBB generator
⢠Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
⢠Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
⢠Output unlatched at cycle end allows two-dimensional chip selection
⢠Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
⢠All inputs and outputs TTL-compatible
⢠1024 refresh cycles / 16 ms
⢠Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01
|
▷ |