|
HYB5117800BSJ-50 Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 2M x 8-Bit Dynamic RAM | |||
|
2M x 8-Bit Dynamic RAM
HYB5117800BSJ-50/-60/-70
Advanced Information
⢠2 097 152 words by 8-bit organization
⢠0 to 70 °C operating temperature
⢠Performance::
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
⢠Single + 5 V (± 10 %) supply
⢠Low power dissipation
max. 660 active mW (-50 version)
max. 605 active mW (-60 version)
max. 550 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (CMOS)
⢠Output unlatched at cycle end allows two-dimensional chip selection
⢠Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
⢠Fast page mode capability
⢠All inputs, outputs and clocks fully TTL-compatible
⢠2048 refresh cycles / 32 ms
⢠Plastic Package:
P-SOJ-28-3 400 mil
Semiconductor Group
1
1.96
|
▷ |