HYB5117400BJ-50- Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM

4M x 4-Bit Dynamic RAM
HYB5117400BJ -50/-60/-70
HYB5117400BT -50/-60/-70
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 660 active mW (-50 version)
max. 605 active mW (-60 version)
max. 550 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms
• Plastic Package:
P-SOJ-26/24 300 mil
P TSOPII-26/24 300 mil
Semiconductor Group
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