HYB3164805J Datasheet, PDF (1/32 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164805J/T(L) -50/-60
HYB 3165805J/T(L) -50/-60
Preliminary Information
• 8 388 608 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
84 ns (-50 version)
104 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
• Hyper page mode (EDO) cycle time
20 ns (-50 version)
25 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
max. 396 active mW ( HYB 3164805J/T(L)-50)
max. 360 active mW ( HYB 3164805J/T(L)-60)
max. 504 active mW ( HYB 3165805J/T(L)-50)
max. 432 active mW ( HYB 3165805J/T(L)-60)
7.2 mW standby (TTL)
720 W standby (MOS)
14.4 mW Self Refresh (L-version only)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
• Hyper page mode (EDO) capability
• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164805J/T(L))
• 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165805J/T(L))
• Plastic Package:
P-SOJ-34-1 500 mil HYB 3164(5)805J
P-TSOPII-34-1 500 mil HYB 3164(5)805T(L)
Semiconductor Group
149