CNY17 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, With Base Connection

CNY17 SERIES
TRIOS“ PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
• Breakdown Voltage, 5300 VAC_RMS
• Field-Effect Stable by TRIOS*
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
• V VDE #0884, Available with Option 1
DE
DESCRIPTION
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be
transmitted by the device while maintaining a high
degree of electrical isolation between input and out-
put.
The CNY17 can be used to replace relays and
transformers in many digital interface applications,
as well as analog applications such as CRT modu-
lation.
Maximum Ratings (T_A=25°C)
Emitter
Reverse Voltage .................................................6 V
Forward Current............................................ 60 mA
Surge Current (t≤10µs)................................... 2.5 A
Power Dissipation.......................................100 mW
Detector
Collector-Emitter Breakdown Voltage ...............70 V
Emitter-Base Breakdown Voltage .......................7 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)......................... 100 mA
Power Dissipation.......................................150 mW
Package
Isolation Test Voltage (Between emitter &
detector referred to climate DIN 40046,
part 2, Nov. 74) ..............................5300 VAC_RMS
Creepage Distance .......................................... ≥7 mm
Clearance Distance ......................................... ≥7 mm
Isolation Thickness between
Emitter and Detector................................. ≥0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1.............................................175
Isolation Resistance
V_IO=500 V, T_A=25°C................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ................................ ≥10¹¹ Ω
Storage Temperature ................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Junction Temperature ....................................100°C
Soldering Temperature (max . 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ..........260°C
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
Pin One ID
Anode ₁
Cathode ₂
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC ₃
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Characteristics (T_A=25°C)
Symbol
Emitter
Forward Voltage
V_F
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Thermal Resistance
Package
Collector-Emitter
Saturation Voltage
Coupling Capacitance
V_BR
I_R
R_thjamb
C_CE
C_CB
C_EB
R_thjamb
V_CEsat
C_C
Unit
1.25
V
(≤1.65)
≥6
V
0.01 (≤10) µA
25
pF
750
K/W
5.2
pF
6.5
pF
7.5
pF
500
K/W
0.25 (≤0.4) V
0.6
pF
Condition
I_F = 60 mA
I_R = 10 mA
V_R = 6 V
V_R = 0 V, f =1 MHz
V_CE =5 V, f =1 MHz
V_CB =5 V, f =1 MHz
V_EB =5 V, f =1 MHz
I_F =10 mA,
I_C=2.5 mA
5–1
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