CGY50 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block)

GaAs MMIC
CGY 50
________________________________________________________________________________________________________
Datasheet
* Single-stage monolithic microwave IC ( MMIC-
amplifier )
* Cascadable 50 Ω gain block
* Application range: 100 MHz to 3 GHz
* IP3 30 dBm typ. @ 1.8 GHz
* Gain 8.5 dB typ. @ 1.8 GHz
* Low noise figure: 3.0 dB typ @ 1.8 GHz
* Gain control dynamic range 20 dB
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
CGY 50 G2
Ordering code
(tape and reel)
Q68000-A8370
Circuit diagram
Pin Configuration
2
OUT/D
4
IN/G
typ. 4kΩ
1, 3 S
Package 1)
SOT-143
Maximum ratings
Drain-voltage
Peak drain-voltage
Current control gate voltage
Drain-gate voltage
Input power ²⁾
Channel temperature
Storage temperature range
Total power dissipation (TS < 82°C) ³⁾
Symbol
V_D
V_DP
V_G
V_DG
P_IN
T_Ch
T_stg
P_tot
Value
5.5
7.5
-3 ... 0
7.5
16
150
-40...+150
400
Unit
V
V
V
V
dBm
°C
°C
mW
Thermal resistance
Channel-soldering point ³⁾
R_thChS
<170
K/W
Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is
required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper
ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF
performance, stable operating conditions and adequate tuning.
1) Dimensions see chapter Package Outlines
2) See application circuit.
3) T_S is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/5
11.01.1996
HL EH PD 21