BYP302 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)

FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
BYP 302
Type
BYP 302
V_RRM
1200V
I_FRMS
40A
t_rr
130ns
Package
TO-218 AD
Maximum Ratings
Parameter
Mean forward current
T_C = 90 °C, D = 0.5
RMS forward current
Surge forward current, sine halfwave, aperiodic
T_j = 100 °C, f = 50 Hz
Repetitive peak forward current
T_j = 100 °C, t_p ≤ 10 µs
i ²t value
T_j = 100 °C, t_p = 10 ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation
T_C = 90 °C
Chip or operating temperature
Storage temperature
Symbol
I_FAV
I_FRMS
I_FSM
I_FRM
∫i²dt
V_RRM
V_RSM
P_tot
T_j
T_stg
Thermal resistance, chip case
Thermal resistance, chip-ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_thJC
R_thJA
-
-
Ordering Code
C67047-A2252-A2
Values
Unit
A
25
40
115
260
A²s
66
1200
V
1200
W
75
-40 ... + 150 °C
-40 ... + 150
≤ 0.8
K/W
≤ 46
E
-
40 / 150 / 56
Semiconductor Group
1
12.96