BUZ357 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 357
SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 357
V_DS
I_D
1000 V 5.1 A
R_DS(on)
2Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
Pulsed drain current
T_C = 25 °C
Avalanche current,limited by T_jmax
Avalanche energy,periodic limited by T_jmax
Avalanche energy, single pulse
I_D = 5.1 A, V_DD = 50 V, R_GS = 25 Ω
L = 62 mH, T_j = 25 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
I_D
I_Dpuls
I_AR
E_AR
E_AS
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Ordering Code
C67078-S3110-A2
Values
Unit
A
5.1
20
5.1
18
mJ
850
± 20
V
W
125
-55 ... + 150 °C
-55 ... + 150
≤1
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
01/97