BUZ342 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)

BUZ 342
SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
Type
BUZ 342
V_DS
50 V
I_D
60 A
R_DS(on)
0.01 Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 150 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = 60 A, V_DD = 25 V, R_GS = 25 Ω
L = 128 µH, T_j = 25 °C
Reverse diode dv/dt
I_S = 0 A, V_DS = 0 V, di_F/dt = 0 A/µs
T_jmax = 0 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-218 AA
Ordering Code
C67078-S3135-A2
Symbol
I_D
I_Dpuls
E_AS
dv/dt
Values
60
240
460
Unit
A
mJ
kV/µs
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
± 20
V
W
400
-55 ... + 175 °C
-55 ... + 175
≤ 0.37
K/W
≤ 75
E
55 / 175 / 56
Semiconductor Group
1
07/96