BUZ310 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
BUZ 310
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 310
V_DS
I_D
1000 V 2.5 A
R_DS(on)
5Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R_GS = 20 kΩ
Continuous drain current
T_C = 25 °C
Pulsed drain current
T_C = 25 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Ordering Code
C67078-A3101-A2
Symbol
V_DS
V_DGR
I_D
I_Dpuls
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Values
Unit
1000
V
1000
A
2.5
10
± 20
V
W
78
-55 ... ...+ 150 °C
-55 ... ...+ 150
≤ 1.6
K/W
75
C
55 / 150 / 56
Semiconductor Group
1
07/96