BUZ272 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ 272
SIPMOS ^® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 272
V_DS
-100 V
I_D
-15 A
R_DS(on)
0.3 Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = -15 A, V_DD = -25 V, R_GS = 25 Ω
L = 1.93 mH, T_j = 25 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
I_D
I_Dpuls
E_AS
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Ordering Code
C67078-S1454-A2
Values
Unit
A
-15
-60
mJ
290
± 20
V
W
125
-55 ... + 150 °C
-55 ... + 150
≤1
K/W
≤ 75
E
55 / 150 / 56
Semiconductor Group
1
07/96