BUZ215 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

BUZ 215
SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• FREDFET
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 215
V_DS
I_D
500 V 5 A
R_DS(on)
1.5 Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R_GS = 20 kΩ
Continuous drain current
T_C = 30 °C
Pulsed drain current
T_C = 25 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
V_DS
V_DGR
I_D
I_Dpuls
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Ordering Code
C67078-A1400-A2
Values
Unit
500
V
500
A
5
20
± 20
V
W
75
-55 ... + 150 °C
-55 ... + 150
≤ 1.67
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96