BUZ104L Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)

SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 104L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 104L
V_DS
50 V
I_D
17.5 A
R_DS(on)
0.1 Ω
Package
TO-220 AB
Ordering Code
C67078-S1358-A2
Maximum Ratings
Parameter
Continuous drain current
T_C = 29 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = 17.5 A, V_DD = 25 V, R_GS = 25 Ω
L = 114 µH, T_j = 25 °C
Reverse diode dv/dt
I_S = 17.5 A, V_DS = 40 V, di_F/dt = 200 A/µs
T_jmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T_C = 25 °C
Symbol
I_D
I_Dpuls
E_AS
dv/dt
V_GS
V_gs
P_tot
Values
17.5
70
35
6
± 14
± 20
60
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96