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| BUZ103AL Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) | |||
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SIPMOS ® Power Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche-rated
⢠Logic Level
⢠dv/dt rated
⢠Low on-resistance
⢠175 °C operating temperature
⢠also in TO-220 SMD available
BUZ 103AL
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 103AL
VDS
50 V
ID
35 A
RDS(on)
0.05 â¦
Package
TO-220 AB
Ordering Code
C67078-S1357-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 35 A, VDD = 25 V, RGS = 25 â¦
L = 81 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 35 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
35
140
100
6
± 14
± 20
120
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96
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