BUZ102S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 102 S
V_DS
55 V
I_D
52 A
BUZ 102 S
SPP52N05
Pin 1
G
Pin 2
D
Pin 3
S
R_DS(on)
0.023 Ω
Package
TO-220 AB
Ordering Code
Q67040-S4011-A2
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = 52 A, V_DD = 25 V, R_GS = 25 Ω
L = 181 µH, T_j = 25 °C
Avalanche current,limited by T_jmax
Avalanche energy,periodic limited by T_jmax
Reverse diode dv/dt
I_S = 52 A, V_DS = 40 V, di_F/dt = 200 A/µs
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Symbol
I_D
I_Dpuls
E_AS
I_AR
E_AR
dv/dt
V_GS
P_tot
Values
52
37
208
245
52
12
6
± 20
120
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
30/Jan/1998