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BUZ101 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) | |||
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BUZ 101
SIPMOS ® Power Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche-rated
⢠dv/dt rated
⢠Low on-resistance
⢠175°C operating temperature
⢠also in TO-220 SMD available
Type
BUZ 101
VDS
50 V
ID
29 A
RDS(on)
0.06 â¦
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25 â¦
L = 83 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1350-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
Unit
A
29
116
mJ
70
kV/µs
6
± 20
V
W
100
-55 ... + 175 °C
-55 ... + 175
⤠1.5
K/W
⤠75
E
55 / 175 / 56
Semiconductor Group
1
07/96
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