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BUZ100 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | |||
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BUZ 100
SIPMOS ® Power Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche-rated
⢠dv/dt rated
⢠Ultra low on-resistance
⢠175°C operating temperature
⢠also in TO-220 SMD available
Type
BUZ 100
VDS
50 V
ID
60 A
RDS(on)
0.018 â¦
Maximum Ratings
Parameter
Continuous drain current
TC = 101 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 60 A, VDD = 25 V, RGS = 25 â¦
L = 70 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1348-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
Unit
A
60
240
mJ
250
kV/µs
6
± 20
V
W
250
-55 ... + 175 °C
-55 ... + 175
⤠0.6
K/W
⤠75
E
55 / 175 / 56
Semiconductor Group
1
07/96
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