BUP410D Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

BUP 410D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 410D
V_CE I_C
600V 13A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 90 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 90 °C
Diode forward current
T_C = 90 °C
Pulsed diode current, t_p = 1 ms
T_C = 25 °C
Power dissipation
T_C = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
I_F
I_Fpuls
P_tot
T_j
T_stg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4425-A2
Values
Unit
600
V
600
± 20
A
13
8
26
16
11
72
W
50
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Dec-12-1996