BUP213 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

BUP 213
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 213
V_CE I_C
1200V 32A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 90 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 90 °C
Avalanche energy, single pulse
I_C = 15 A, V_CC = 50 V, R_GE = 25 Ω
L = 200 µH, T_j = 25 °C
Power dissipation
T_C = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
E_AS
P_tot
T_j
T_stg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4407-A2
Values
Unit
1200
V
1200
± 20
A
32
20
64
40
mJ
22
W
200
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Nov-30-1995