BUP200 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

BUP 200
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 200
V_CE I_C
Package
1200V 3.6A TO-220 AB
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 90 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 90 °C
Avalanche energy, single pulse
I_C = 1.5 A, V_CC = 50 V, R_GE = 25 Ω
L = 3.3 mH, T_j = 25 °C
Power dissipation
T_C = 25 °C
Chip or operating temperature
Storage temperature
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
E_AS
P_tot
T_j
T_stg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67078-A4400-A2
Values
Unit
1200
V
1200
± 20
A
3.6
2.4
7.2
4.8
mJ
3.5
W
50
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Dec-06-1995