BTS725L1 Datasheet, PDF (1/14 Pages) Siemens Semiconductor Group – Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

PROFET® Preliminary BTS 725 L1
Smart Two Channel Highside Power Switch
Product Summary
Features
• _{Overload protection}
• _{Current limitation}
• _{Short-circuit protection}
• _{Thermal shutdown}
• _{Overvoltage protection}
(including load dump)
• _{Reverse battery protection}1)
• _{Undervoltage and overvoltage shutdown}
Overvoltage Protection
Operating voltage
active channels:
On-state resistance R_ON
Nominal load current I_L(NOM)
Current limitation
I_L(SCr)
with auto-restart and hysteresis
• _{Open drain diagnostic output}
• Open load detection in ON-state
• _{CMOS compatible input}
• _{Loss of ground and loss of Vbb protection}
• _{Electrostatic discharge (ESD) protection}
V_bb(AZ)
Vbb(on)
one
60
4.0
17
43 V
5.0 ... 24 V
two parallel
30
mΩ
6.0
A
17
A
Application
• _{µC compatible power switch with diagnostic feedback}
for 12 V DC grounded loads
• _{Most suitable for resistive and lamp loads}
• _{Replaces electromechanical relays and discrete circuits}
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
V_bb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
V_bb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
V_bb
1•
2
3
4
5
6
7
8
9
10
20 V_bb
19 V_bb
18 OUT1
17 OUT1
16 V_bb
15 V_bb
14 OUT2
13 OUT2
12 V_bb
11 V_bb
1) _{With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST}
connection, reverse load current limited by connected load.
Semiconductor Group
1
03.96