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BTS711L1 Datasheet, PDF (1/15 Pages) Siemens Semiconductor Group – Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
PROFET® BTS 711 L1
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation IL(SCr)
Vbb(AZ)
Vbb(on)
43 V
5.0 ... 34 V
one two parallel four parallel
200 100
50 mΩ
1.9
2.8
4.4 A
4
4
4
A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol
Vbb
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
Pin configuration (top view)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT2
16 Vbb
15 Vbb
14 OUT3
13 OUT4
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96