BTS560 Datasheet, PDF (1/15 Pages) Siemens Semiconductor Group – Smart Highside High Current Power Switch

PROFET^® Target Data Sheet BTS560
Smart Highside High Current Power Switch
Features
• _{Overload protection}
• _{Current limitation}
• _{Short circuit protection}
• _{Overtemperature protection}
• _{Overvoltage protection (including load dump)}
• _{Clamp of negative voltage at output}
• _{Fast deenergizing of inductive loads} ¹⁾
• _{Low ohmic inverse current operation}
• _{Reverse battery protection}
• _{Diagnostic feedback with load current sense}
• _{Open load detection via current sense}
• _{Loss of Vbb protection}²⁾
• _{Electrostatic discharge (ESD) protection}
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
V_bb(AZ)
V_ON(CL)
Vbb(on)
RON
IL(ISO)
IL(SCp)
IL : I_IS
70 V
60 V
5.0 ... 55 V
4 mΩ
96 A
320 A
25 000
TO-218AB/5
Application
• _{Power switch with current sense diagnostic}
feedback for up to 48 V DC grounded loads
• _{Most suitable for loads with high inrush current}
like lamps and motors; all types of resistive and
inductive loads
• _{Replaces electromechanical relays, fuses and}
discrete circuits
5
1
Straight leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
Voltage
source
Voltage
sensor
2 _IN
ESD
Logic
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT ^{1, 5}
I_L
Load
I _IN
V_IN
V_IS
Logic GND
I _IS
IS
4
RIS
Temperature
sensor
PROFET^®
Load GND
1_{) With additional external diode.}
2) _{Additional external diode required for energized inductive loads (see page 8).}
Semiconductor Group
Page 1 of 15
1998-Jun-17