BTS432E2 Datasheet, PDF (1/13 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)

PROFET® BTS 432 E2
Smart Highside Power Switch
Features
Product Summary
• _{Load dump and reverse battery protection}1)
• _{Clamp of negative voltage at output}
• _{Short-circuit protection}
• _{Current limitation}
• _{Thermal shutdown}
• _{Diagnostic feedback}
• _{Open load detection in ON-state}
• _{CMOS compatible input}
• _{Electrostatic discharge (ESD) protection}
• _{Loss of ground and loss of Vbb protection}2)
• _{Overvoltage protection}
V_{Load dump}
80 V
V_bb-V_OUT Avalanche Clamp
58 V
V_{bb (operation)}
4.5 ... 42 V
V_{bb (reverse)}
-32 V
R_ON
38 mΩ
I_L(SCp)
44 A
I_L(SCr)
35 A
I_L(ISO)
11 A
• _{Undervoltage and overvoltage shutdown with auto-restart and hysteresis}
5
Application
• _{µC compatible power switch with diagnostic feedback}
for 12 V and 24 V DC grounded loads
• _{All types of resistive, inductive and capacitve loads}
• _{Replaces electromechanical relays and discrete circuits}
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 ^IN
Voltage
source
V _Logic
Voltage
sensor
ESD
4 ST
Logic
R _bb
Overvoltage Current
Gate
protection
limit protection
+ Vbb ₃
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
5
Temperature
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET^®
Load GND
1) _{No external components required, reverse load current limited by connected load.}
2) _{Additional external diode required for charged inductive loads}
Semiconductor Group
1
04.96