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BTS410H2 Datasheet, PDF (1/13 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) | |||
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PROFET® BTS 410 H2
Smart Highside Power Switch
Features
⢠Overload protection
⢠Current limitation
⢠Short circuit protection
⢠Thermal shutdown
⢠Overvoltage protection (including load dump)
⢠Fast demagnetization of inductive loads
⢠Reverse battery protection1)
⢠Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
⢠Open drain diagnostic output
⢠Open load detection in OFF-state
⢠CMOS compatible input
⢠Loss of ground and loss of Vbb protection
⢠Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 mâ¦
1.8 A
1.5 A
TO-220AB/5
5
Standard
5
1
Straight leads
5
1
SMD
Application
⢠µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
⢠Most suitable for inductive loads
⢠Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
OUT
unclamped
5
ind. loads Temperature
sensor
Open load
detection
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 â¦) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
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