BTS100 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)

Smart Highside Power Switch
TEMPFET^®
Features
q P channel
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electrically shorted to the tab
BTS 100
Pin
1
2
3
G
D
S
Type
BTS 100
V_DS
– 50 V
I_D
–8A
R_DS(on)
0.3 Ω
Package
TO-220AB
Ordering Code
C67078-A5007-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Continuous drain current, T_C = 30 °C
ISO drain current
T_C = 85 ˚C, V_GS = 10 V, V_DS = 0.5 V
Pulsed drain current, T_C = 25 °C
Short circuit current, T_j = – 55 ... + 150 °C
Short circuit dissipation, T_j = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
V_DS
V_DGR
V_GS
I_D
I_D-ISO
I_{D puls}
I_SC
P_SCmax
P_tot
T_j, T_stg
–
–
R_{th JC}
R_{th JA}
Values
– 50
– 50
± 20
– 8.0
– 1.5
– 32
– 25
500
40
– 55 ... + 150
E
55/150/56
≤ 3.1
≤ 75
Unit
V
A
W
°C
–
K/W
Semiconductor Group
1
04.96