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BSS89 Datasheet, PDF (1/7 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor
BSS 89
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 89
Type
BSS 89
BSS 89
BSS 89
VDS
240 V
ID
0.3 A
Ordering Code
Q62702-S519
Q62702-S619
Q62702-S385
Pin 1
G
Pin 2
D
RDS(on)
6Ω
Package
TO-92
Tape and Reel Information
E6288
E6296
E6325
Marking
SS89
Pin 3
S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Semiconductor Group
1
Values
Unit
240
V
240
± 14
± 20
A
0.3
1.2
W
1
12/05/1997