BSS80 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

PNP Silicon Switching Transistors
q High DC current gain
q Low collector-emitter saturation voltage
q Complementary types: BSS 79, BSS 81 (NPN)
BSS 80
BSS 82
Type
BSS 80 B
BSS 80 C
BSS 82 B
BSS 82 C
Marking
CHs
CJs
CLs
CMs
Ordering Code
(tape and reel)
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 77 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BSS 80 BSS 82
40
60
60
5
800
1
100
200
330
150
– 65 … + 150
Thermal Resistance
Junction - ambient²⁾
Rth JA
Junction - soldering point
Rth JS
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
≤ 290
≤ 220
Unit
V
mA
A
mA
mW
˚C
K/W
Semiconductor Group
1
5.91