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BSS295 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSS 295
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 295
Type
BSS 295
BSS 295
VDS
50 V
ID
1.4 A
Ordering Code
Q67000-S238
Q67000-S105
Pin 1
G
Pin 2
D
RDS(on)
0.3 Ω
Package
TO-92
Tape and Reel Information
E6288
E6325
Marking
SS 295
Pin 3
S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 24 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
Unit
50
V
50
± 14
± 20
A
1.4
5.6
W
1
Semiconductor Group
1
12/05/1997