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BSS229 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | |||
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SIPMOS® Small-Signal Transistor
q VDS 250 V
q ID
0.07 A
q RDS(on) 100 â¦
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 229
1 23
Type
Ordering
Code
Tape and Reel
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Pin Configuration Marking Package
123
GDS
SS229 TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kâ¦
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ËC
Pulsed drain current,
TA = 25 ËC
Max. power dissipation, TA = 25 ËC
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
250
250
± 14
± 20
0.07
0.21
0.63
â 55 ⦠+ 150
Unit
V
A
W
ËC
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
⤠200
K/W
â
E
â
â
55/150/56
Semiconductor Group
1
04.97
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