BSS159 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS ^® Small-Signal Transistor
• N channel
• Depletion mode
• High dynamic resistance
BSS 159
Preliminary data
Pin 1
G
Pin 2
S
Pin 3
D
Type
BSS 159
V_DS
50 V
I_D
0.16 A
R_DS(on)
8Ω
Package
SOT-23
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R_GS = 20 kΩ
Gate source voltage
Gate-source peak voltage, aperiodic
Continuous drain current
T_A = 25 °C
DC drain current, pulsed
T_A = 25 °C
Power dissipation
T_A = 25 °C
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate - reverse side ¹⁾
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_DS
V_DGR
V_GS
V_gs
I_D
I_Dpuls
P_tot
T_j
T_stg
R_thJA
R_thJSR
Ordering Code
Q67050-T6
Values
Unit
50
V
50
± 14
± 20
A
0.16
0.48
W
0.36
-55 ... + 150 °C
-55 ... + 150
≤ 350
K/W
≤ 285
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
May-30-1996