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| BSS123 Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor | |||
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BSS 123
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Logic Level
⢠VGS(th) = 0.8...2.0V
Type
BSS 123
Type
BSS 123
BSS 123
VDS
100 V
ID
0.17 A
Ordering Code
Q62702-S512
Q67000-S245
Pin 1
G
Pin 2
S
RDS(on)
6â¦
Package
SOT-23
Tape and Reel Information
E6327
E6433
Marking
SAs
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kâ¦
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 28 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
Unit
100
V
100
± 14
± 20
A
0.17
0.68
W
0.36
Semiconductor Group
1
Sep-13-1996
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