BSS110 Datasheet, PDF (1/7 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

BSS 110
SIPMOS ^® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V_GS(th) = -0.8...-2.0 V
Type
BSS 110
Type
BSS 110
BSS 110
BSS 110
V_DS
-50 V
I_D
-0.17 A
Ordering Code
Q62702-S500
Q62702-S278
Q67000-S568
Pin 1
S
Pin 2
G
R_DS(on)
10 Ω
Package
TO-92
Tape and Reel Information
E6288
E6296
E6325
Marking
SS 110
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R_GS = 20 kΩ
Gate source voltage
Continuous drain current
T_A = 35 °C
DC drain current, pulsed
T_A = 25 °C
Power dissipation
T_A = 25 °C
Semiconductor Group
Symbol
V_DS
V_DGR
V_GS
I_D
I_Dpuls
P_tot
Values
Unit
-50
V
-50
± 20
A
-0.17
-0.68
W
0.63
1
12/05/1997