BSP60BSP62 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

PNP Silicon Darlington Transistors
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BSP 50 … BSP 52 (NPN)
BSP 60
… BSP 62
Type
BSP 60
BSP 61
BSP 62
Marking
BSP 60
BSP 61
BSP 62
Ordering Code
(tape and reel)
Q62702-P1166
Q62702-P1167
Q62702-P1168
Pin Configuration
1 234
B CEC
Package¹⁾
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
Values
Unit
BSP 60 BSP 61 BSP 62
VCER
45
60
80
V
VCB0
60
80
90
VEB0
5
IC
1
A
ICM
2
IB
0.1
Ptot
1.5
W
Tj
150
˚C
Tstg
– 65 … + 150
Rth JA
Rth JS
≤ 72
K/W
≤ 17
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91