BSP50BSP52 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

NPN Silicon Darlington Transistors
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BSP 60 … BSP 62 (PNP)
BSP 50
… BSP 52
Type
BSP 50
BSP 51
BSP 52
Marking
BSP 50
BSP 51
BSP 52
Ordering Code
(tape and reel)
Q62702-P1163
Q62702-P1164
Q62702-P1165
Pin Configuration
1 234
B CEC
Package¹⁾
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
Values
Unit
BSP 50 BSP 51 BSP 52
VCER
45
60
80
V
VCB0
60
80
100
VEB0
5
IC
1
A
ICM
2
IB
0.1
Ptot
1.5
W
Tj
150
˚C
Tstg
– 65 … + 150
Rth JA
Rth JS
≤ 72
K/W
≤ 17
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91