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| BSP320S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |||
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BSP 320 S
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche rated
⢠VGS(th)= 2.1 ... 4.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 320 S
VDS
60 V
ID
2.9 A
RDS(on)
0.12 â¦
Package Marking
SOT-223
Ordering Code
Q67000-S4001
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 100 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 â¦
L = 14.3 mH, Tj = 25 °C
Avalanche energy, periodic limited by Tj(max)
Avalanche current, repetitive,limited by Tj(max)
Reverse diode dv/dt
IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Semiconductor Group
1
Symbol
ID
IDpuls
EAS
EAR
IAR
dv/dt
VGS
Ptot
Values
2.9
1.85
11.6
60
0.18
2.9
6
± 20
1.8
Unit
A
mJ
A
KV/µs
V
W
29/01/1998
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