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| BSP318S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated) | |||
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BSP 318 S
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Logic Level
⢠Avalanche rated
⢠VGS(th) = 1.2 ...2.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 318 S
VDS
60 V
ID
2.6 A
RDS(on)
0.15 â¦
Package Marking
SOT-223 BSP 318 S
Ordering Code
Q 67000-S127
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 100 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 2.6 A, VDD = 25 V, RGS = 25 â¦
L = 10 mH, Tj = 25 °C
Avalanche energy, periodic limited by Tj(max)
Avalanche current, repetitive,limited by Tj(max)
Reverse diode dv/dt
IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Semiconductor Group
1
Symbol
ID
IDpuls
EAS
EAR
IAR
dv/dt
VGS
Ptot
Values
2.6
1.7
10.4
60
0.18
2.6
6
± 14
1.8
Unit
A
mJ
A
KV/µs
V
W
29/01/1998
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