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BSP315 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP 315
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Type
BSP 315
Type
BSP 315
BSP 315
VDS
-50 V
ID
-1.1 A
Ordering Code
Q67000-S75
Q67000-S249
Pin 1 Pin 2 Pin 3 Pin 4
G
D
S
D
RDS(on)
0.8 Ω
Package
SOT-223
Tape and Reel Information
E6327
E6433
Marking
BSP 315
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Continuous drain current
TA = 39 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
ID
IDpuls
Ptot
Values
Unit
-50
V
-50
± 20
A
-1.1
-4.4
W
1.8
Semiconductor Group
1
Sep-12-1996