BSP280 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)

IGBT Transistor
BSP 280
Preliminary Data
q V_CE 1000 V
q I _C 2.5 A
q N channel
q MOS input (voltage-controlled)
q High switch speed
q Very low tail current
q Latch-up free
q Suitable freewheeling diode BAX 280
Type
Ordering Code Tape and Reel
Information
BSP 280 Q67000-S279 E6327: 1000 pcs/reel
Pin Configuration
1234
GCE C
Marking
BSP 280
Package
SOT-223
Maximum Ratings
Parameter
Symbol Values
Unit
Continuous collector current
I_C
Soldering point,
T_S = 25 ˚C
T_S = 80 ˚C
Continuous collector current ambient, T_A = 80 ˚C I_C
Pulsed collector current
Soldering point,
T_S = 80 ˚C
I_{C puls}
Collector-emitter voltage
V_CE
Gate-emitter voltage
V_GE
Power dissipation
P_tot
Soldering point,
T_S = 80 ˚C
Ambient
T_A = 25 ˚C
Operating and storage temperature range
T_j, T_stg
Thermal resistance ¹⁾
chip-ambient
chip-soldering point
R_thJA
R_thJS
DIN humidity category, DIN 40 040
–
A
2.5
1.5
0.5
3.0
1000
V
± 20
W
10
1.8
– 40 … + 150
˚C
70
K/W
6
E
–
IEC climatic category, DIN IEC 68-1
–
40/150/56
IGBT = Insulated Gate Bipolar Transistor
1) _{Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm}2 _{copper area for drain connection.}