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| BSP223 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor | |||
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Preliminary data
BSP 223
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche rated
⢠VGS(th)= 2.1 ... 4.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 223
VDS
600 V
ID
0.38 A
RDS(on)
5â¦
Package
SOT-223
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 1.4 A, VDD = 50 V, RGS = 25 â¦
L = 122 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Marking
BSP 223
Values
Unit
A
0.38
1.52
mJ
130
± 20
V
W
1.8
Semiconductor Group
1
25/09/1997
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