BSP171P Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)

Preliminary data
BSP 171 P
SIPMOS^® Power Transistor
•P-Channel
•Enhancement mode
•Avalanche rated
•Logic Level
•dv/dt rated
Type
BSP 171 P
V_DS I_D
R_DS(on)
-60 V -1.8 A 0.3 Ω
Pin 1
G
Pin2/4
D
Pin 3
S
@ VGS
Package
Ordering Code
V_GS = -10 V P-SOT223-4-1 Q67041-S4019
-
-
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A = 25 °C
T_A = 100 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
I_D = -1.8 A, V_DD = -25 V, R_GS = 25 Ω
Avalanche current,periodic limited by T_jmax
Avalanche energy,periodic limited by T_j(max)
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
I_AR
E_AR
dv/dt
I_S = -1.8 A, V_DD ≤V_(BR)DSS, di/dt = 100 A/µs,
T_jmax = 150 °C
Gate source voltage
V_GS
Power dissipation, T_A = 25 °C
P_tot
Operating temperature
T_j
Storage temperature
T_stg
IEC climatic category; DIN IEC 68-1
Value
-1.8
-1.15
-7.2
70
-1.8
0.18
6
Unit
A
mJ
A
mJ
KV/µs
±14
V
1.8
W
-55 ...+150
°C
-55 ...+150
55/150/56
Semiconductor Group
1
04 / 1998