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| BSP170P Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) | |||
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SIPMOS® Power Transistor
â¢P-Channel
â¢Enhancement mode
â¢Avalanche rated
â¢dv/dt rated
Preliminary data
Pin 1
G
Type
BSP 170 P
VDS ID
RDS(on)
60 V -1.9 A 0.3 â¦
@ VGS
Package
VGS = -10 V SOT-223
-
BSP 170 P
Pin 2/4
D
Pin 3
S
Ordering Code
Q67041-S4018
Maximum Ratings , at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA = 25 °C
TA = 70 °C
Pulsed drain current
IDpulse
TA = 25 °C
Avalanche energy, single pulse
ID = -1.9 A, VDD = -25 V, RGS = 25 â¦
Avalanche current,periodic limited by Tjmax
Avalanche energy,periodic limited by Tj(max)
Reverse diode dv/dt
EAS
IAR
EAR
dv/dt
IS = -1.9 A, VDD â¤V(BR)DSS, di/dt = 200 A/µs,
Tjmax = 150 °C
Gate source voltage
VGS
Power dissipation
Ptot
TA = 25 °C
Operating temperature
Tj
Storage temperature
Tstg
IEC climatic category; DIN IEC 68-1
Value
-1.9
-1.5
-7.6
70
-1.9
0.18
6
Unit
A
mJ
A
mJ
kV/µs
±20
V
1.8
W
-55 ... +150
°C
-55...+150
55/150/56
Semiconductor Group
1
07 / 1998
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