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| BSP170 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated) | |||
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BSP 170
SIPMOS ® Small-Signal Transistor
⢠P channel
⢠Enhancement mode
⢠Avalanche rated
⢠VGS(th) = -2.1...-4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G
D
S
D
Type
BSP 170
Type
BSP 170
VDS
-60 V
ID
-1.7 A
Ordering Code
Q67000-S . . .
RDS(on)
0.35 â¦
Package
SOT-223
Tape and Reel Information
E6327
Marking
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = -1.7 A, VDD = -25 V, RGS = 25 â¦
L = 3.23 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
Unit
A
-1.7
-6.8
mJ
8
± 20
V
W
1.8
Semiconductor Group
1
22/05/1997
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